Short-wavelength continuous 300-K photopumped Al/sub x/Ga/sub 1-x/As-GaAs quantum well heterostructure laser (lambda> or approx. =7270 A)
Journal Article
·
· Appl. Phys. Lett.; (United States)
Data are presented demonstrating room-temperature continuous (cw 300 K) photopumped laser operation of Al/sub x/Ga/sub 1-x/As-GaAs (xapprox.0.4) quantum well heterostructures (QWH) at wavelengths as short as lambdaapprox.7270 A, or h..omega..-E/sub g/ (GaAs)approx.280 meV. Photoexcitation levels on these six-well L/sub z/ approx.28 A QWH's have been as low as 5.6 x 10/sup 3/ W/cm/sup 2/ or J/sub e/q approx.2.3 x 10/sup 3/ A/cm/sup 2/, which is in a practical range for cw 300-K diodes.
- Research Organization:
- Department of Electrical Engineering and Coordinated Science Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
- OSTI ID:
- 5899960
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 40:1; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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OSTI ID:6224094
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· Appl. Phys. Lett.; (United States)
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· Appl. Phys. Lett.; (United States)
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OSTI ID:6448402
Related Subjects
42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
DATA
ENERGY LEVELS
ENERGY-LEVEL TRANSITIONS
EXCITATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
INFORMATION
JUNCTIONS
LASERS
MEDIUM TEMPERATURE
OPTICAL PUMPING
PNICTIDES
PUMPING
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
WAVELENGTHS
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
DATA
ENERGY LEVELS
ENERGY-LEVEL TRANSITIONS
EXCITATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
INFORMATION
JUNCTIONS
LASERS
MEDIUM TEMPERATURE
OPTICAL PUMPING
PNICTIDES
PUMPING
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
WAVELENGTHS