Stable continuous room-temperature laser operation of Al/sub x/Ga/sub 1-//sub x/As-GaAs quantum well heterostructures grown on Si

Journal Article · Mon Jul 06 00:00:00 EDT 1987 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.98879· OSTI ID:6448402

Nam, D W; Holonyak, N Jr; Hsieh, K C; Kaliski, R W; Lee, J W; Shichijo, H; Epler, J E; Burnham, R D; Paoli, T L

Data are presented demonstrating stable room-temperature continuous (cw) photopumped laser operation of an Al/sub x/Ga/sub 1-//sub x/As-GaAs quantum well heterostructure (QWH) grown on Si by a combination of molecular beam epitaxy and metalorganic chemical vapor deposition. The cw 300 K laser operation of the single well Al/sub x/Ga/sub 1-//sub x/As-GaAs QWH occurs at an excitation threshold of 6.7 x 10/sup 3/ W/cm/sup 2/ (J/sub eq/ = 2.8 x 10/sup 3/ A/cm/sup 2/), or a factor of 10 lower than similar multiple well QWH's. The laser operation is stable for four (or more) hours, the length of the ''test.''

• Research Organization: Electrical Engineering Research Laboratory, Center for Compound Semiconductor Microelectronics, and Materials Research Laboratory, University of Illinois at Urbana--Champaign, Urbana, Illinois 61801
• OSTI ID: 6448402
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 51:1; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
COATINGS
DATA
DEPOSITION
ELEMENTS
ENERGY
EPITAXY
EXPERIMENTAL DATA
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
INFORMATION
JUNCTIONS
LASERS
MOLECULAR BEAM EPITAXY
NUMERICAL DATA
OPERATION
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SEMIMETALS
SILICON
STABILITY
SURFACE COATING
THRESHOLD ENERGY
VAPOR DEPOSITED COATINGS