Room-temperature continuous operation of p-n Al/sub x/Ga/sub 1-//sub x/As-GaAs quantum well heterostructure lasers grown on Si

Journal Article · Mon Aug 31 00:00:00 EDT 1987 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.98371· OSTI ID:6410730

Deppe, D G; Jr, Holonyak N; Nam, D W; Hsieh, K C; Jackson, G S; Matyi, R J; Shichijo, H; Epler, J E; Chung, H F

We describe the construction and room-temperature (300 K) continuous (cw) operation of p-n diode Al/sub x/Ga/sub 1-//sub x/As-GaAs quantum well heterostructure (QWH) lasers grown on Si substrates. The QWH crystal is grown in two stages, the first part by molecular beam epitaxy (MBE) and the single-well quantum well active region by metalorganic chemical vapor deposition (MOCVD). Simple gain-guided stripe configuration lasers fabricated on the MBE MOCVD QWH wafer operate cw at 300 K and have pulsed thresholds as low as 1.8 x 10/sup 3/ A/cm/sup 2/.

• Research Organization: Electrical Engineering Research Laboratory, Center for Compound Semiconductor Microelectronics, and Materials Research Laboratory, University of Illinois at Urbana--Champaign, Urbana, Illinois 61801
• OSTI ID: 6410730
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 51:9; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
DATA
DEPOSITION
DESIGN
ENERGY
EPITAXY
EXPERIMENTAL DATA
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INFORMATION
JUNCTIONS
LASERS
MOLECULAR BEAM EPITAXY
NUMERICAL DATA
OPERATION
P-N JUNCTIONS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SURFACE COATING
THRESHOLD ENERGY