Thermal behavior and stability of room-temperature continuous Al/sub x/Ga/sub 1-//sub x/As-GaAs quantum well heterostructure lasers grown on Si
Data are presented on the thermal characteristics of p-n Al/sub x/Ga/sub 1-//sub x/As-GaAs quantum well heterostructure (QWH) diode lasers grown on Si substrates. Continuous 300-K operation for over 10 h is demonstrated for lasers mounted with the junction side away from the heat sink (''junction-up'') and the heat dissipated through the Si substrate. ''Junction-up'' diodes that are grown on Si substrates have measured thermal impedances that are 38% lower than those grown on GaAs substrates, with further reductions possible. Thermal impedance data on ''junction-down'' diodes are presented for comparison. Measured values are consistent with calculated values for these structures. Low sensitivity of the lasing threshold current to temperature is also observed, as is typical for QWH lasers, with T/sub 0/ values as high as 338 /sup 0/C.
- Research Organization:
- Electrical Engineering Research Laboratory, Center for Compound Semiconductor Microelectronics, and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
- OSTI ID:
- 6977187
- Journal Information:
- J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 64:6; ISSN JAPIA
- Country of Publication:
- United States
- Language:
- English
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Stable continuous room-temperature laser operation of Al/sub x/Ga/sub 1-//sub x/As-GaAs quantum well heterostructures grown on Si
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Related Subjects
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
DATA
ELECTRIC CURRENTS
ELEMENTS
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
INFORMATION
JUNCTIONS
LASERS
MEDIUM TEMPERATURE
NUMERICAL DATA
OPERATION
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SEMIMETALS
SILICON
STABILITY
TEMPERATURE EFFECTS
THRESHOLD CURRENT