Reduced temperature sensitivity Al/sub x/Ga/sub 1-x/As-GaAs quantum well lasers with (Si/sub 2/)/sub x/(GaAs)/sub 1-x/ ''barriers''

Journal Article · Mon Apr 28 00:00:00 EDT 1986 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.96455· OSTI ID:5812798

Jackson, G S; Deppe, D G; Hsieh, K C; Jr, Holonyak N; Hall, D C; Burnham, R D; Thornton, R L; Paoli, T L

The temperature dependence of threshold current of quantum well heterostructure (QWH) laser diodes is reduced by inserting (Si/sub 2/)/sub x/(GaAs)/sub 1-x/ barriers in the active region. Alloy clustering of the (Si/sub 2/)/sub x/(GaAs)/sub 1-x/ barriers, grown by metalorganic chemical vapor deposition, leads to further QW carrier localization and an increase in T/sub 0/ in the usual expression J/sub th/ = J/sub 0/ exp(T/T/sub 0/) for the threshold current. Values as high as T/sub 0/ = 250-275 /sup 0/C have been measured.

• Research Organization: Electrical Engineering Research Laboratory and Materials Research Laboratory, University of Illinois at Urbana--Champaign, Urbana, Illinois 61801
• OSTI ID: 5812798
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 48:17; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
CURRENTS
DATA
DEPOSITION
ELECTRIC CURRENTS
ELEMENTS
EXPERIMENTAL DATA
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INFORMATION
LASERS
NUMERICAL DATA
ORGANIC COMPOUNDS
ORGANOMETALLIC COMPOUNDS
PNICTIDES
POTENTIALS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SEMIMETALS
SILICON
SURFACE COATING
THRESHOLD CURRENT