Quantum well Al/sub x/Ga/sub 1-x/As-GaAs lasers with internal (Si/sub 2/)/sub x/(GaAs)/sub 1-x/ barriers

Journal Article · Sun Mar 23 23:00:00 EST 1986 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.96674· OSTI ID:5953130

Burnham, R D; Jr, Holonyak N; Hsieh, K C; Kaliski, R W; Nam, D W; Thornton, R L; Paoli, T L

Data are presented showing that the alloy (Si/sub 2/)/sub x/(GaAs)/sub 1-x/ can be formed in a GaAs quantum well (QW) and shifts the operation of an Al/sub x/Ga/sub 1-x/As-GaAs QW laser to higher energy. The (Si/sub 2/)/sub x/(GaAs)/sub 1-x/ barrier, which is formed by sheet deposition (metalorganic chemical vapor deposition) of Si on the initial portion of a GaAs QW layer and then by ''capping'' this with the remaining part of the QW, can be observed directly by transmission electron microscopy.

• Research Organization: Xerox Palo Alto Research Center, Palo Alto, California 94304
• OSTI ID: 5953130
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 48:12; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
DEPOSITION
ELECTROMAGNETIC RADIATION
ELECTRON MICROSCOPY
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
JUNCTIONS
LASER RADIATION
LASERS
MICROSCOPY
OPERATION
PERFORMANCE
PNICTIDES
POTENTIALS
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SURFACE COATING
TRANSMISSION ELECTRON MICROSCOPY