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Photopumped laser operation of Al/sub x/Ga/sub 1-//sub x/As-GaAs quantum well heterostructures with Se and Mg sheet doping

Journal Article · · Appl. Phys. Lett.; (United States)
DOI:https://doi.org/10.1063/1.97333· OSTI ID:5014492

Photoluminescence (77 and 300 K) and transmission electron microscopy (TEM) data are presented on Al/sub x/Ga/sub 1-//sub x/As-GaAs quantum well heterostructures with Se sheet doping in the GaAs quantum wells and Mg sheet doping in the Al/sub x/Ga/sub 1-//sub x/As (x--0.2) barriers. Sheet or ''spike'' doping, which is surface deposited during the metalorganic chemical vapor deposition crystal growth, leads to a high impurity concentration and direct observation of the doping layer in TEM. Photopumped laser operation (77 and 300 K, pulsed and continuous) of compensated samples leads to modes 30--40 meV below the n = 1 confined-particle electron-to-heavy-hole transition and involves the Se impurity. Mg spike doping of the barriers is used to compensate the Se doping of the wells, making the active region p type and thus allowing the observation of stimulated emission involving the ''spike'' distribution of Se.

Research Organization:
Electrical Engineering Research Laboratory, Center of Compound Semiconductor Microelectronics, and Materials Research Laboratory, University of Illinois at Urbana--Champaign, Urbana, Illinois 61801
OSTI ID:
5014492
Journal Information:
Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 49:20; ISSN APPLA
Country of Publication:
United States
Language:
English