Photopumped laser operation of Al/sub x/Ga/sub 1-//sub x/As-GaAs quantum well heterostructures with Se and Mg sheet doping
Photoluminescence (77 and 300 K) and transmission electron microscopy (TEM) data are presented on Al/sub x/Ga/sub 1-//sub x/As-GaAs quantum well heterostructures with Se sheet doping in the GaAs quantum wells and Mg sheet doping in the Al/sub x/Ga/sub 1-//sub x/As (x--0.2) barriers. Sheet or ''spike'' doping, which is surface deposited during the metalorganic chemical vapor deposition crystal growth, leads to a high impurity concentration and direct observation of the doping layer in TEM. Photopumped laser operation (77 and 300 K, pulsed and continuous) of compensated samples leads to modes 30--40 meV below the n = 1 confined-particle electron-to-heavy-hole transition and involves the Se impurity. Mg spike doping of the barriers is used to compensate the Se doping of the wells, making the active region p type and thus allowing the observation of stimulated emission involving the ''spike'' distribution of Se.
- Research Organization:
- Electrical Engineering Research Laboratory, Center of Compound Semiconductor Microelectronics, and Materials Research Laboratory, University of Illinois at Urbana--Champaign, Urbana, Illinois 61801
- OSTI ID:
- 5014492
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 49:20; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
420300* -- Engineering-- Lasers-- (-1989)
ALKALINE EARTH METALS
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL DOPING
ELECTRON MICROSCOPY
ELEMENTS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
IMPURITIES
JUNCTIONS
LASERS
LUMINESCENCE
MAGNESIUM
METALS
MICROSCOPY
OPERATION
OPTICAL PUMPING
PHOTOLUMINESCENCE
PNICTIDES
PUMPING
SELENIUM
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SEMIMETALS
TRANSMISSION ELECTRON MICROSCOPY