Clustering in molecular-beam epitaxial Al/sub x/Ga/sub 1-x/As-GaAs quantum-well heterostructure lasers
The effects of alloy clustering in Al/sub x/Ga/sub 1-x/As-GaAs quantum-well heterostructures (QWH's) grown by molecular-beam epitaxy (MBE) are investigated. Both low- and high-level photoluminescence data on three of the best MBE QWH lasers are presented. These data indicate that while clustering in Al/sub x/Ga/sub 1-x/As can depend on crystal growth conditions (temperature, stoichiometry, surface chemistry, contamination, etc.), it is to an appreciable extent intrinsic to the alloy. Clustering in Al/sub x/Ga/sub 1-x/As can result from the random distribution of Al and Ga atoms regardless of the method of crystal growth. In addition, this work demonstrates cw 300-K photopumped laser operation of MBE QWH's, which would not be possible if the distributed and heterointerface defect densities (of unknown amount) were very high.
- Research Organization:
- Electrical Engineering Research Laboratory and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
- OSTI ID:
- 6019577
- Journal Information:
- J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 52:12; ISSN JAPIA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
420300* -- Engineering-- Lasers-- (-1989)
ALLOYS
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
CHEMISTRY
CONTAMINATION
CRYSTAL DEFECTS
CRYSTAL GROWTH
CRYSTAL STRUCTURE
DATA
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INFORMATION
LASERS
LUMINESCENCE
MOLECULAR BEAMS
OPTICAL PUMPING
PHOTOLUMINESCENCE
PNICTIDES
PUMPING
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
STOICHIOMETRY
SURFACE CONTAMINATION
TEMPERATURE DEPENDENCE