Hydrostatic pressure measurements (< or approx. =12 kbar) on single- and multiple-stripe quantum-well heterostructure laser diodes
Journal Article
·
· J. Appl. Phys.; (United States)
Short wavelength Al/sub x/'Ga/sub 1-x/'As-Al/sub x/Ga/sub 1-x/As (x'approx.0.85, xapprox.0.22) quantum-well heterostructure (QWH) laser diodes (well size L/sub z/ roughly-equal400 A) that operate continuously (cw) at 300 K are subjected to hydrostatic pressure (< or approx. =12 kbar). The emission spectrum and the light intensity versus current (L-I) curves are monitored to determine the pressure dependence of the direct (GAMMA) band gap and the threshold current. The band gap exhibits a linear pressure dependence with a noticeable change in slope at approx.4.5 kbar, similar to previously reported results for Al/sub x/Ga/sub 1-x/As-GaAs QWH diodes. The threshold current increases monotonically with pressure, reflecting the increasing loss of carriers to the X and L bands. The short-wavelength cw limit of the system, i.e., a gain-guided laser with a 400-A Al/sub x/Ga/sub 1-x/As (xapprox.0.22) quantum well and no separate waveguide region, is determined to be approx.6980 A.
- Research Organization:
- Electrical Engineering Research Laboratory and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
- OSTI ID:
- 6362788
- Journal Information:
- J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 57:5; ISSN JAPIA
- Country of Publication:
- United States
- Language:
- English
Similar Records
Hydrostatic pressure measurements (less than or equal to 12 kbar) on single- and multiple-stripe quantum-well heterostructure laser diodes
Short-wavelength continuous 300-K photopumped Al/sub x/Ga/sub 1-x/As-GaAs quantum well heterostructure laser (lambda> or approx. =7270 A)
High pressure measurements on Al/sub x/Ga/sub 1-x/As-GaAs (x = 0. 5 and 1) superlattices and quantum well heterostructure lasers
Journal Article
·
Thu Feb 28 23:00:00 EST 1985
· J. Appl. Phys.; (United States)
·
OSTI ID:5455637
Short-wavelength continuous 300-K photopumped Al/sub x/Ga/sub 1-x/As-GaAs quantum well heterostructure laser (lambda> or approx. =7270 A)
Journal Article
·
Thu Dec 31 23:00:00 EST 1981
· Appl. Phys. Lett.; (United States)
·
OSTI ID:5899960
High pressure measurements on Al/sub x/Ga/sub 1-x/As-GaAs (x = 0. 5 and 1) superlattices and quantum well heterostructure lasers
Journal Article
·
Wed Sep 01 00:00:00 EDT 1982
· J. Appl. Phys.; (United States)
·
OSTI ID:5034215
Related Subjects
42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
AMPLITUDES
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
DATA
ELECTRIC CURRENTS
EMISSION
EMISSION SPECTRA
ENERGY GAP
ENERGY-LEVEL TRANSITIONS
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INFORMATION
LASERS
NUMERICAL DATA
PNICTIDES
PRESSURE EFFECTS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SPECTRA
STIMULATED EMISSION
THRESHOLD CURRENT
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
AMPLITUDES
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
DATA
ELECTRIC CURRENTS
EMISSION
EMISSION SPECTRA
ENERGY GAP
ENERGY-LEVEL TRANSITIONS
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INFORMATION
LASERS
NUMERICAL DATA
PNICTIDES
PRESSURE EFFECTS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SPECTRA
STIMULATED EMISSION
THRESHOLD CURRENT