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Hydrostatic pressure measurements (< or approx. =12 kbar) on single- and multiple-stripe quantum-well heterostructure laser diodes

Journal Article · · J. Appl. Phys.; (United States)
DOI:https://doi.org/10.1063/1.334461· OSTI ID:6362788
Short wavelength Al/sub x/'Ga/sub 1-x/'As-Al/sub x/Ga/sub 1-x/As (x'approx.0.85, xapprox.0.22) quantum-well heterostructure (QWH) laser diodes (well size L/sub z/ roughly-equal400 A) that operate continuously (cw) at 300 K are subjected to hydrostatic pressure (< or approx. =12 kbar). The emission spectrum and the light intensity versus current (L-I) curves are monitored to determine the pressure dependence of the direct (GAMMA) band gap and the threshold current. The band gap exhibits a linear pressure dependence with a noticeable change in slope at approx.4.5 kbar, similar to previously reported results for Al/sub x/Ga/sub 1-x/As-GaAs QWH diodes. The threshold current increases monotonically with pressure, reflecting the increasing loss of carriers to the X and L bands. The short-wavelength cw limit of the system, i.e., a gain-guided laser with a 400-A Al/sub x/Ga/sub 1-x/As (xapprox.0.22) quantum well and no separate waveguide region, is determined to be approx.6980 A.
Research Organization:
Electrical Engineering Research Laboratory and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
OSTI ID:
6362788
Journal Information:
J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 57:5; ISSN JAPIA
Country of Publication:
United States
Language:
English