High pressure measurements on Al/sub x/Ga/sub 1-x/As-GaAs (x = 0. 5 and 1) superlattices and quantum well heterostructure lasers

Journal Article · Wed Sep 01 04:00:00 EDT 1982 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.331553· OSTI ID:5034215

Kirchoefer, S W; Holonyak, N Jr; Hess, K; Meehan, K; Gulino, D A; Drickamer, H G; Coleman, J J; Dapkus, P D

Absorption data on AlAs-GaAs and Al/sub x/Ga/sub 1-x/As-GaAs superlattices (SL's) and emission data on Al/sub x/Ga/sub 1-x/As-GaAs quantum well heterostructure (QWH) laser diodes subjected to hydrostatic pressure (0--10 kbar) at 300 K are presented. Superlattice absorption data show that the confined-particle transitions, which partition and ''label'' the GAMMA energy band high above the band edge, all move with the same pressure coefficient of 11.5 meV/kbar. (For bulk GaAs, the pressure coefficient is 12.5 meV/kbar.) The effect of the L indirect minima on the highest observed confined-particle transitions is small; the effect of the X minima is large. At lower pressures, QWH diodes exhibit a pressure dependence similar to that of the free (unconstrained) SL's. The data on QWH diodes demonstrate, however, a size-dependent (L/sub z/(GaAs)<500 A) shift in slope to a lower (8.5 meV/kbar) energy gap versus pressure coefficient at higher pressures. This change in slope can be explained by considering the effect on the light- and heavy-hole subbands of shear stresses generated within the p-n diode heterostructure.

• Research Organization: Electrical Engineering Research Laboratory and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
• DOE Contract Number: AC02-76ER01198
• OSTI ID: 5034215
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 53:9; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ABSORPTION
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
DATA
ENERGY GAP
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
HIGH PRESSURE
INFORMATION
JUNCTIONS
LASERS
MATHEMATICAL MODELS
MEDIUM PRESSURE
MEDIUM TEMPERATURE
NUMERICAL DATA
PNICTIDES
PRESSURE DEPENDENCE
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SUPERLATTICES