Absorption measurements at high pressure on AlAs-Al/sub x/Ga/sub 1-x/As-GaAs superlattices

Journal Article · Sat May 01 04:00:00 EDT 1982 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.93273· OSTI ID:5584284

Kirchoefer, S W; Holonyak, N Jr; Hess, K; Gulino, D A; Drickamer, H G; Coleman, J J; Dapkus, P D

Absorption data (300 K) are presented on Al/sub x/Ga/sub 1-x/As-GaAs and AlAs-GaAs superlattices subjected to hydrostatic pressure (0--10 kbar). These data show that the confined-particle transitions, which partition and ''label'' the GAMMA energy band high above the band edge (as high as 400 meV or well above the L minima), all move with the same pressure coefficient (11.5 meV/kbar). A weaker effect of the L than the X indirect minima on the absorption is observed.

• Research Organization: Electrical Engineering Research Laboratory and Materials Research Laboratory, University of Illinois at Urbana--Champaign, Urbana, Illinois 61801
• OSTI ID: 5584284
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 40:9; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ABSORPTION
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
DATA
ENERGY LEVELS
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INFORMATION
MEDIUM TEMPERATURE
NUMERICAL DATA
PNICTIDES
PRESSURE DEPENDENCE
SUPERLATTICES
VERY HIGH PRESSURE