Photoluminescence studies of GaAs/AlAs superlattices

Conference · Wed Dec 31 23:00:00 EST 1986

OSTI ID:6009866

Jones, E D; Drummond, T J; Hjalmarson, H P; Schirber, J E

Low-temperature pressure-dependent photoluminescence measurements on short-period GaAs/AlAs superlattice structures are presented. Measurements show that the lower energy conduction-band states are in the AlAs layers and the highest energy valence-band states are located in the GaAs layers. This result is supported by the following three experimental observations: the observed pressure coefficient for the conduction-band to valence-band transition energy is negative, the magnetic mass of this transition is ''heavy'', and the band-to-band absorption coefficient appears to be small. These experimental observations are in agreement with predictions of tight-binding calculations.

• Research Organization: Sandia National Labs., Albuquerque, NM (USA)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6009866
• Report Number(s): SAND-87-2038C; CONF-8708112-1; ON: DE87013817
• Country of Publication: United States
• Language: English

Related Subjects

656002* -- Condensed Matter Physics-- General Techniques in Condensed Matter-- (1987-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ABSORPTION SPECTRA
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
DATA ACQUISITION SYSTEMS
ELECTRONIC STRUCTURE
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LUMINESCENCE
PHOTOLUMINESCENCE
PNICTIDES
PRESSURE DEPENDENCE
SPECTRA
SUPERLATTICES