Carrier density and excitation energy dependent GAMMA-X photoluminescence of Type-II GaAs/AlAs superlattices
Conference
·
OSTI ID:6505866
Experimental and theoretical photoluminescence studies of ''Type-II'' GaAs/AlAs superlattices exhibit unusual behavior of GAMMA- and X-point features that reveal energy dependent relaxation channels and GAMMA- and X-point populations that depend on carrier heating and band filling. 10 refs., 2 figs.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (USA)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 6505866
- Report Number(s):
- SAND-88-3019C; CONF-890312-1; ON: DE89002988
- Country of Publication:
- United States
- Language:
- English
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