Bandgap energy pressure coefficients in strained-layer structures
Conference
·
OSTI ID:6727478
The hydrostatic-pressure coefficients of the bandgap energies for four different types of semiconductor heterojunction structures were obtained from photoluminescence measurements at 4K and pressures up to 4 kbar. The structures studied were n-type and p-type In/sub x/Ga/sub 1-x/As/GaAs and n-type GaAs/GaP/sub x/As/sub 1-x/ strained-layer superlattices, n-type In/sub x/Ga/sub 1-x/As/GaAs single strained quantum wells and an undoped GaAs/AlAs superlattice. The bandgap energies ranged from 1800 MeV for the GaAs/AlAS structure to 1280 MeV for the In/sub x/Ga/sub 1-x/As/GaAs single strained quantum wells. Pressure coefficients for the In/sub x/Ga/sub 1-x/As/GaAs and GaAs/GaP/sub x/As sub 1-x/ structures were found to be in the range of 10 to 12 MeV/kbar. However, the pressure coefficient of the luminescence energy from the GaAs/AlAs superlattice was found to be -2 MeV/kbar. This negative pressure coefficient is consistent with the interpretation that the luminescence is due to a transition between the construction-band X-point in the AlAs layers and the valence-band GAMMA-point in the GaAs layers.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (USA)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 6727478
- Report Number(s):
- SAND-87-0437C; CONF-870385-2; ON: DE87006713
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360603* -- Materials-- Properties
42 ENGINEERING
420800 -- Engineering-- Electronic Circuits & Devices-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
ENERGY GAP
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
JUNCTIONS
LUMINESCENCE
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOTOLUMINESCENCE
PNICTIDES
PRESSURE EFFECTS
SEMICONDUCTOR JUNCTIONS
SUPERLATTICES
VERY HIGH PRESSURE
360603* -- Materials-- Properties
42 ENGINEERING
420800 -- Engineering-- Electronic Circuits & Devices-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
ENERGY GAP
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
JUNCTIONS
LUMINESCENCE
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOTOLUMINESCENCE
PNICTIDES
PRESSURE EFFECTS
SEMICONDUCTOR JUNCTIONS
SUPERLATTICES
VERY HIGH PRESSURE