Visible-spectrum indium gallium phosphide arsenide lasers and high-pressure measurements on quantum-well heterostructure lasers

Thesis/Dissertation · Fri Jan 01 04:00:00 EST 1982

OSTI ID:6262499

Kirchoefer, S W

Hydrostatic pressure studies on metalorganic chemical vapor deposition (MO-CVD) grown Al/sub x/Ga/sub 1-x/As-GaAs quantum-well heterostructure (QWH) laser diodes and on AlAs-GaAs and Al/sub x/Ga/sub 1-x/As-GaAs superlattices (SL's) are described. The growth and characterization of visible-light emitting In/sub 1-x/Ga/sub x/P-In/sub 1-x/Ga/sub x/P/sub 1-z/As/sub z/ heterostructures grown on GaAs/sub 1-y/P/sub y/ substrates are discussed. Optical absorption experiments on Mo-CVD AlAs-GaAs and Al/sub x/Ga/sub 1-x/As-GaAs SL's subjected to hydrostatic pressure enable the simultaneous measurement of pressure coefficients not only near the Gamma-conduction band edge, but also on confined-particle states high intelligence which allows for the simultaneous transmission of data between all processor pairs, the dynamic establishment of connections, broadcast capability and system monitoring functions.

• OSTI ID: 6262499
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
INDIUM COMPOUNDS
JUNCTIONS
LASER MATERIALS
LASERS
MATERIALS
OPTICAL PROPERTIES
PHOSPHORUS COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
PRESSURE COEFFICIENT
REACTIVITY COEFFICIENTS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS