Hydrostatic pressure measurements (less than or equal to 12 kbar) on single- and multiple-stripe quantum-well heterostructure laser diodes
Short wavelength Al/sub x'/Ga/sub 1 - x'/As-Al/sub x/Ga/sub 1 - x/As(x' approx. 0.85, x approx. 0.22) quantum-well heterostructure (QWH) laser diodes (well size L/sub z/ approx. = 400 A) that operate continuously (cw) at 300 K are subjected to hydrostatic pressure (less than or equal to 12 kbar). The emission spectrum and the light intensity versus current (L-I) curves are monitored to determine the pressure dependence of the direct (GAMMA) band gap and the threshold current. The band gap exhibits a linear pressure dependence with a noticeable change in slope at approx. 4.5 kbar, similar to previously reported results for Al/sub x/Ga/sub 1 - x/As-GaAs QWH diodes. The threshold current increases monotonically with pressure, reflecting the increasing loss of carriers to the X and L bands. The short-wavelength cw limit of the system, i.e., a gain-guided laser with a 400-A, Al/sub x/Ga/sub 1 - x/As(xapprox.0.22) quantum well and no separate waveguide region, is determined to be approx. 6980 A. 22 references, 5 figures, 1 table.
- Research Organization:
- Univ. of Ilinois, Urbana-Champaign
- DOE Contract Number:
- AC02-76ER01198
- OSTI ID:
- 5455637
- Journal Information:
- J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 57:5; ISSN JAPIA
- Country of Publication:
- United States
- Language:
- English
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