Low-threshold disorder-defined buried-heterostructure Al/sub x/Ga/sub 1-x/As-GaAs quantum well lasers

Journal Article · Sun Dec 15 04:00:00 EST 1985 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.336265· OSTI ID:5031610

Deppe, D G; Hsieh, K C; Jr, Holonyak N; Burnham, R D; Thornton, R L

Two different quantum well heterostructure wafers are used to fabricate buried-heterostructure Al/sub x/Ga/sub 1-x/As-GaAs quantum well lasers using Si-induced layer disordering (via Si diffusion). In contrast to the first wafer (QWH1), the second quantum well wafer (QWH2) utilizes Zn instead of Mg as the p-type dopant in the top Al/sub x/Ga/sub 1-x/As confining layer and yields, because of concentration mismatch in acceptor and donor doping in the confining layers (n/sub Zn/>n/sub Se/), inferior laser diodes owing to Zn diffusion from the p-type to the n-type confining layer during high temperature processing (850 /sup 0/C Si diffusion). The first quantum well heterostructure, however, employs a lower concentration Mg doping for its p-type confining layer (n/sub Mg/

• Research Organization: Electrical Engineering Research Laboratory and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
• OSTI ID: 5031610
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 58:12; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
DATA
DIFFUSION
ELECTRIC CURRENTS
ELEMENTS
EXPERIMENTAL DATA
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
INFORMATION
JUNCTIONS
LASERS
METALS
NUMERICAL DATA
P-N JUNCTIONS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SEMIMETALS
SILICON
THRESHOLD CURRENT
VERY HIGH TEMPERATURE
ZINC