Low-threshold disorder-defined buried-heterostructure Al/sub x/Ga/sub 1-x/As-GaAs quantum well lasers
Two different quantum well heterostructure wafers are used to fabricate buried-heterostructure Al/sub x/Ga/sub 1-x/As-GaAs quantum well lasers using Si-induced layer disordering (via Si diffusion). In contrast to the first wafer (QWH1), the second quantum well wafer (QWH2) utilizes Zn instead of Mg as the p-type dopant in the top Al/sub x/Ga/sub 1-x/As confining layer and yields, because of concentration mismatch in acceptor and donor doping in the confining layers (n/sub Zn/>n/sub Se/), inferior laser diodes owing to Zn diffusion from the p-type to the n-type confining layer during high temperature processing (850 /sup 0/C Si diffusion). The first quantum well heterostructure, however, employs a lower concentration Mg doping for its p-type confining layer (n/sub Mg/
- Research Organization:
- Electrical Engineering Research Laboratory and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
- OSTI ID:
- 5031610
- Journal Information:
- J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 58:12; ISSN JAPIA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
DATA
DIFFUSION
ELECTRIC CURRENTS
ELEMENTS
EXPERIMENTAL DATA
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
INFORMATION
JUNCTIONS
LASERS
METALS
NUMERICAL DATA
P-N JUNCTIONS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SEMIMETALS
SILICON
THRESHOLD CURRENT
VERY HIGH TEMPERATURE
ZINC