Anomalous threshold current and time delays in index-guided Al/sub x/Ga/sub 1-//sub x/As-GaAs quantum-well lasers

Journal Article · Tue Dec 01 04:00:00 EST 1987 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.339068· OSTI ID:6084343

Jackson, G S; Hall, D C; Jr, Holonyak N; Hsieh, K C; Epler, J E; Paoli, T L

Anomalous threshold current (I/sub th/) variation with temperature and with pulse length, and large delays (up to 6 ..mu..s) between excitation and the turn-on of stimulated emission are observed in index-guided Al/sub x/Ga/sub 1-//sub x/As-GaAs quantum-well heterostructure (QWH) lasers. These effects are found in laser diodes incorporating ''spike'' doping layers (delta-Mg and delta-Se) within the QWH active region and that are fabricated via laser-assisted Si impurity-induced layer disordering. The introduction of contaminants during the localized melting and regrowth of the laser-induced layer disordering, and the effect of these impurities (or defects) with the active region ''spike'' doping create traps. The traps cause I/sub th/ to increase (not decrease) at lower temperature and at shorter current pulses, and cause time delay in turn-on of the operation.

• Research Organization: Electrical Engineering Research Laboratory, Center for Compound Semiconductor Microelectronics, and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
• OSTI ID: 6084343
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 62:11; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
DATA
ELECTRIC CURRENTS
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
INFORMATION
JUNCTIONS
LASERS
NUMERICAL DATA
OPERATION
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
THRESHOLD CURRENT
TIME DELAY
TRAPS