Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

High-power disorder-defined coupled stripe Al/sub /ital y//Ga/sub 1/minus///sub /ital y//As-GaAs-In/sub /ital x//Ga/sub 1/minus///sub /ital x//As quantum well heterostructure lasers

Journal Article · · Appl. Phys. Lett.; (United States)
DOI:https://doi.org/10.1063/1.101926· OSTI ID:5885644

Data are presented describing continuous (cw) room-temperature laser operation of Al/sub /ital y//Ga/sub 1/minus///sub /ital y//As-GaAs-In/sub /ital x//Ga/sub 1/minus///sub /ital x//As quantum well heterostructure (QWH) phase-locked arrays. The ten-stripe arrays have 3 /mu/m emitters, with emitter to emitter spacing of 4 /mu/m, and are patterned onto the QWH crystal using a self-aligned Si-O impurity-induced layer disordering (IILD) procedure. The IILD process is devised to provide limited layer intermixing to ensure optical coupling (across /similar to/1 /mu/m). The coupled stripe QWH lasers exhibit narrow twin-lobed far-field patterns that show unambiguously phase locking in the highest order supermode. The cw output power of the lasers (differential quantum efficiency 52%) is shown from threshold (/similar to/75 mA) to over 280 mW (both facets, no optical coatings).

Research Organization:
Electrical Engineering Research Laboratory, Center for Compound Semiconductor Microelectronics, and Materials Research Laboratory, University of Illinois at UrbanaChampaign, Urbana, Illinois 61801 (US); Polaroid Corporation, Cambridge, Massachusetts 02139
OSTI ID:
5885644
Journal Information:
Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 55:3; ISSN APPLA
Country of Publication:
United States
Language:
English