High-power disorder-defined coupled stripe Al/sub /ital y//Ga/sub 1/minus///sub /ital y//As-GaAs-In/sub /ital x//Ga/sub 1/minus///sub /ital x//As quantum well heterostructure lasers
Data are presented describing continuous (cw) room-temperature laser operation of Al/sub /ital y//Ga/sub 1/minus///sub /ital y//As-GaAs-In/sub /ital x//Ga/sub 1/minus///sub /ital x//As quantum well heterostructure (QWH) phase-locked arrays. The ten-stripe arrays have 3 /mu/m emitters, with emitter to emitter spacing of 4 /mu/m, and are patterned onto the QWH crystal using a self-aligned Si-O impurity-induced layer disordering (IILD) procedure. The IILD process is devised to provide limited layer intermixing to ensure optical coupling (across /similar to/1 /mu/m). The coupled stripe QWH lasers exhibit narrow twin-lobed far-field patterns that show unambiguously phase locking in the highest order supermode. The cw output power of the lasers (differential quantum efficiency 52%) is shown from threshold (/similar to/75 mA) to over 280 mW (both facets, no optical coatings).
- Research Organization:
- Electrical Engineering Research Laboratory, Center for Compound Semiconductor Microelectronics, and Materials Research Laboratory, University of Illinois at UrbanaChampaign, Urbana, Illinois 61801 (US); Polaroid Corporation, Cambridge, Massachusetts 02139
- OSTI ID:
- 5885644
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 55:3; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHALCOGENIDES
COUPLING
CURRENTS
DATA
ELECTRIC CURRENTS
ELECTROMAGNETIC RADIATION
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
IMPURITIES
INDIUM ARSENIDES
INDIUM COMPOUNDS
INFORMATION
INFRARED RADIATION
JUNCTIONS
LASER RADIATION
LASERS
MIXING
NUMERICAL DATA
OPERATION
OXIDES
OXYGEN COMPOUNDS
PNICTIDES
POWER
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SILICON COMPOUNDS
SILICON OXIDES
THRESHOLD CURRENT