Hydrogenated multiple stripe high-power long-wavelength (1. 06. mu. m) continuous (10--50 degree C) Al sub y Ga sub 1 minus y As-GaAs-In sub x Ga sub 1 minus x As quantum well heterostructure lasers
- Electrical Engineering Research Laboratory, Center for Compound Semiconductor Microelectronics, and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (US)
High-power operation of hydrogenated Al{sub {ital y}}Ga{sub 1{minus}{ital y}}As-GaAs-In{sub {ital x}}Ga{sub 1{minus}{ital x}}As ten-stripe arrays operating at {lambda}{similar to}1.06 {mu}m is described. Continuous (cw) operation of arrays with uncoated facets that are stabilized in temperature at 10 {degree}C has produced output powers as high as 375 mW/facet at 1.4 A. The optical coupling of the gain-guided arrays is shown to be significantly different from otherwise similar arrays fabricated in the Al{sub {ital y}}Ga{sub 1{minus}{ital y}}As-GaAs system. Limited lifetesting'' (168 h) of these strained layer diodes, stabilized at 50 {degree}C and a cw output power of 100 mW/facet (200 mW total), indicates good operating stability.
- OSTI ID:
- 6985247
- Journal Information:
- Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 56:2; ISSN APPLA; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
426002* -- Engineering-- Lasers & Masers-- (1990-)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
DATA
ELECTROMAGNETIC RADIATION
EXPERIMENTAL DATA
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INFORMATION
INFRARED RADIATION
JUNCTIONS
LASERS
LAYERS
MEDIUM TEMPERATURE
NEAR INFRARED RADIATION
NUMERICAL DATA
OPERATION
PNICTIDES
POWER
POWER RANGE MILLI W
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SOLID STATE LASERS
STABILIZATION