Broadband long-wavelength operation (9700 A/approx gt//lambda//approx gt/8700 A) of Al/sub /ital y//Ga/sub 1/minus//ital y//As-GaAs-In/sub /ital x//Ga/sub 1/minus//ital x//As quantum well heterostructure lasers in an external grating cavity
Journal Article
·
· Appl. Phys. Lett.; (United States)
Data are presented on /ital p/-/ital n/ Al/sub /ital y//Ga/sub 1/minus//ital y//As- GaAs-In/sub /ital x//Ga/sub 1/minus//ital x//As quantum well heterostructure lasers showing that the large band filling range of a combined GaAs-In/sub /ital x//Ga/sub 1/minus//ital x//As quantum well makes possible a very large tuning range in external grating operation. Continuous 300 K laser operation is demonstrated in the 8696--9711 A range (/Delta//lambda//similar to/1000 A, /Delta//h bar//omega//similar to/150 meV) and pulsed operation in the 8450--9756 A range (/Delta//lambda//similar to/1300 A, /Delta//h bar//omega//similar to/200 meV). The band filling and gain profile are shown to be continuous from the In/sub /ital x//Ga/sub 1/minus//ital x//As quantum well (/ital L//sub /ital z// /similar to/125 A, /ital x//similar to/0.2) up into the surrounding GaAs quantum well (/ital L//sub /ital z// /similar to/430 A).
- Research Organization:
- Electrical Engineering Research Laboratory, Center for Compound Semiconductor Microelectronics, and Materials Research Laboratory, University of Illinois at UrbanaChampaign, Urbana, Illinois 61801 (US); Polaroid Corporation, Cambridge, Massachusetts 02139
- OSTI ID:
- 6045232
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 55:8; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CAVITIES
ELECTROMAGNETIC RADIATION
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GRATINGS
HETEROJUNCTIONS
INFRARED RADIATION
JUNCTIONS
LASER CAVITIES
LASERS
NEAR INFRARED RADIATION
OPERATION
PNICTIDES
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SOLID STATE LASERS
TUNING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CAVITIES
ELECTROMAGNETIC RADIATION
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GRATINGS
HETEROJUNCTIONS
INFRARED RADIATION
JUNCTIONS
LASER CAVITIES
LASERS
NEAR INFRARED RADIATION
OPERATION
PNICTIDES
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SOLID STATE LASERS
TUNING