Low-threshold disorder-defined buried heterostructure strained-layer Al/sub y/Ga/sub 1-//sub y/As-GaAs-In/sub x/Ga/sub 1-//sub x/As quantum well lasers (lambdaapprox. 910 nm)
Journal Article
·
· Appl. Phys. Lett.; (United States)
The stability of strained-layer Al/sub y/ Ga/sub 1-//sub y/As-GaAs-In/sub x/Ga/sub 1-//sub x/ As single quantum well heterostructures against thermal processing is examined using transmission and scanning electron microscopy. A self-aligned impurity-induced layer disordering process employing Si-O diffusion is used to produce buried heterostructure stripe geometry lasers with a pseudomorphic In/sub x/Ga/sub 1-//sub x/ As quantum well active region. The 2-..mu..m-wide stripe laser diodes exhibit high efficiency (etaapprox.41%/facet), low threshold (I/sub th/ = 7 mA), and high output power (P/sub out/ >20 mW/facet).
- Research Organization:
- Electrical Engineering Research Laboratory, Center for Compound Semiconductor Microelectronics, and Materials Research Laboratory, University of Illinois at Urbana--Champaign, Urbana, Illinois 61801
- OSTI ID:
- 6474956
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 54:10; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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OSTI ID:5885644
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OSTI ID:22054334
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OSTI ID:21090618
Related Subjects
42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
DATA
DIFFUSION
EFFICIENCY
ELECTRON MICROSCOPY
ENERGY
EXPERIMENTAL DATA
FABRICATION
FILMS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
IMPURITIES
INDIUM ARSENIDES
INDIUM COMPOUNDS
INFORMATION
JUNCTIONS
LASERS
MICROSCOPY
NUMERICAL DATA
PERFORMANCE
PNICTIDES
POWER
POWER RANGE MILLI W
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
STABILITY
THIN FILMS
THRESHOLD ENERGY
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
DATA
DIFFUSION
EFFICIENCY
ELECTRON MICROSCOPY
ENERGY
EXPERIMENTAL DATA
FABRICATION
FILMS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
IMPURITIES
INDIUM ARSENIDES
INDIUM COMPOUNDS
INFORMATION
JUNCTIONS
LASERS
MICROSCOPY
NUMERICAL DATA
PERFORMANCE
PNICTIDES
POWER
POWER RANGE MILLI W
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
STABILITY
THIN FILMS
THRESHOLD ENERGY