Low threshold buried heterostructure quantum well diode lasers by laser-assisted disordering
The first buried heterostructure laser diodes fabricated by laser-assisted disordering, a direct-write process, are described. In laser-assisted disordering a focused laser beam is scanned across the AlGaAs-GaAs heterostructure material to induce local melting and thereby incorporate Si from an encapsulation layer into the regrown crystal. A subsequent thermal anneal (850 /sup 0/C, 0.7 h) is used to diffuse the Si deeper into the sample to enlarge the disordered region. This combination of patterned crystal regrowth and impurity-induced disordering is used to fabricate quantum well devices with lasing threshold currents as low as 6 mA (pulsed) and 8 mA (continuous). These devices have a narrow 4.5-..mu..m-wide waveguide region and operate with a single longitudinal and spatial mode. They are the first optoelectronic devices fabricated with a direct-write laser-assisted process.
- Research Organization:
- Xerox Palo Alto Research Center, Palo Alto, California 94304
- OSTI ID:
- 6798985
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 50:23; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL GROWTH
CURRENTS
DATA
ELECTRIC CURRENTS
ELECTROMAGNETIC RADIATION
ELEMENTS
EXPERIMENTAL DATA
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
IMPURITIES
INFORMATION
JUNCTIONS
LASER RADIATION
LASERS
NUMERICAL DATA
OPERATION
PNICTIDES
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SEMIMETALS
SILICON
THRESHOLD CURRENT