Low threshold buried-heterostructure quantum well lasers by excimer laser assisted disordering

Journal Article · Mon Oct 17 00:00:00 EDT 1988 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.99966· OSTI ID:7085441

Epler, J E; Thornton, R L; Mosby, W J; Paoli, T L

Laser assisted disordering based upon a direct-write Ar/sup +/ laser beam has been established as a fabrication technique for high quality optoelectronic devices. In this letter, we report a new form of laser assisted disordering in which an excimer laser beam, photolithographically patterned, is used to define the incorporation of Si impurity into GaAs-AlGaAs heterostructure crystals. During a subsequent thermal anneal the diffusing Si induces layer disordering to a depth of approx.1 ..mu..m. The excimer laser assisted disordering process is characterized as a function of the energy density of the laser beam. Also, this technique is used to fabricate high quality buried-heterostructure lasers. With a reflective rear facet, the typical cw threshold current is 4 mA and the maximum power output is 27 mW. The devices exhibit single fundamental mode operation with subsidiary longitudinal side modes suppressed by 34 dB.

• Research Organization: Xerox Palo Alto Research Center, Palo Alto, California 94304
• OSTI ID: 7085441
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 53:16; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL DOPING
CURRENTS
DATA
DIFFUSION
ELECTRIC CURRENTS
ELEMENTS
EXCIMER LASERS
EXPERIMENTAL DATA
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GAS LASERS
HETEROJUNCTIONS
IMPURITIES
INFORMATION
JUNCTIONS
LASERS
NUMERICAL DATA
OPERATION
OPTICAL MODES
OSCILLATION MODES
PNICTIDES
POWER
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SEMIMETALS
SILICON
THRESHOLD CURRENT