Highly efficient, long lived AlGaAs lasers fabricated by silicon impurity induced disordering

Journal Article · Mon Jul 21 00:00:00 EDT 1986 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.97201· OSTI ID:5453528

Thornton, R L; Burnham, R D; Paoli, T L; Jr, Holonyak N; Deppe, D G

The process of silicon impurity induced disordering has been used to fabricate very efficient buried heterostructure AlGaAs lasers with lifetimes in the thousands of hours at 50 /sup 0/C. These devices operate in a single transverse mode up to 25 mW, and in a single longitudinal mode with adjacent mode suppression of 23 dB.

• Research Organization: Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, California 94304
• OSTI ID: 5453528
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 49:3; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CONTROL
ELEMENTS
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
IMPURITIES
LASERS
LIFETIME
MODE CONTROL
MODE SELECTION
OPERATION
ORDER-DISORDER TRANSFORMATIONS
PHASE TRANSFORMATIONS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SEMIMETALS
SILICON