Highly efficient multiple emitter index guided array lasers fabricated by silicon impurity induced disordering

Journal Article · Sun Jan 05 23:00:00 EST 1986 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.96769· OSTI ID:6211879

Thornton, R L; Burnham, R D; Paoli, T L; Jr, Holonyak N; Deppe, D G

We describe the fabrication of closely spaced arrays of buried heterostructure semiconductor lasers by the process of silicon impurity induced disordering. These devices have the low threshold currents which are associated with buried heterostructure lasers, as well as high overall device efficiency. The device we have analyzed for this letter exhibits a threshold current of 53 mA, differential quantum efficiency of 62%, and a total power conversion efficiency of 43% when operating at a power output level of 250 mW. These numbers indicate that this technology is quite promising for the fabrication of high power semiconductor laser arrays.

• Research Organization: Xerox Palo Alto Research Center, Palo Alto, California 94304
• OSTI ID: 6211879
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 48:1; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
CURRENTS
DATA
EFFICIENCY
ELECTRIC CURRENTS
ELEMENTS
EXPERIMENTAL DATA
FABRICATION
HETEROJUNCTIONS
IMPURITIES
INFORMATION
JUNCTIONS
LASERS
NUMERICAL DATA
OPERATION
POWER
QUANTUM EFFICIENCY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SEMIMETALS
SILICON
THRESHOLD CURRENT