Unified planar process for fabricating heterojunction bipolar transistors and buried-heterostructure lasers utilizing impurity-induced disordering
Journal Article
·
· Appl. Phys. Lett.; (United States)
We describe results on a novel geometry of heterojunction bipolar transistor that has been realized by impurity-induced disordering. This structure is fabricated by a method that is compatible with techniques for the fabrication of low threshold current buried-heterostructure lasers. We have demonstrated this compatibility by fabricating a hybrid laser/transistor structure that operates as a laser with a threshold current of 6 mA at room temperature, and as a transistor with a current gain of 5.
- Research Organization:
- Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, California 94304
- OSTI ID:
- 6594401
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 53:26; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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