Vertical integration of an InGaAsP/InP heterojunction bipolar transistor and a double heterostructure laser

Journal Article · Mon Apr 06 00:00:00 EDT 1987 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.98018· OSTI ID:6728180

Chen, T R; Utaka, K; Zhuang, Y H; Liu, Y Y; Yariv, A

A double heterostructure InGaAsP/InP mesa laser and a mass transport laser were integrated vertically with an InGaAsP/InP double heterojunction bipolar transistor, resulting in the first realization of laser operation in a vertical integration. Laser thresholds as low as 17 mA and an output laser power of over 30 mW were observed. A new type of bistable laser and electro-optical switching were demonstrated.

• Research Organization: Department of Applied Physics, California Institute of Technology, Pasadena, California 91125
• OSTI ID: 6728180
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 50:14; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
COUPLING
DATA
ELECTRICAL EQUIPMENT
ENERGY
EQUIPMENT
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFORMATION
LASERS
NUMERICAL DATA
OPERATION
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
POWER
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SWITCHES
THRESHOLD ENERGY
TRANSISTORS