Proton-defined stripe geometry InGaAsP/InP double heterostructure lasers
InGaAsP/InP four layer double heterostructure wafers have been grown by liquid phase epitaxy. The conditions needed for growing InGaAsP/InP and InP/InGaAsP heterojunctions with flat interfaces and high crystal quality have been investigated. The heterojunction lattice mismatch was measured and LPE conditions for lattice matched-heterojunction were established. The relations between tellurium or zinc concentrations in the melts and the carrier concentrations in the LPE layers of InP were investigated, and the effect of zinc doping conditions on the junction position, injection efficiency of the p-n junctions and other junction properties was examined. Stripe geometry InGaAsP/InP DH lasers were fabricated by means of proton bombardment. The emission wavelengths of the lasers operating continuously at room temperature (300 K) were 1.30--1.33 ..mu..m. The room temperature threshold current density of the broad contact lasers was 2000 A/cm/sup 2/, and the normalized threshold current density was 5 kA/cm/sup 2/x..mu... The temperature dependence of the threshold current was measured in the range of 80--330 K, and the characteristic temperature T/sub 0/ was found to be 79--108 K in the range of 80--285 K and 63--73 K around room temperature. Continuous operation of more than 3000 hours has been achieved under atmospheric conditions.
- Research Organization:
- Institute of Semiconductors, Chinese Academy of Sciences, Beijing
- OSTI ID:
- 6861729
- Journal Information:
- Chin. Phys.; (United States), Journal Name: Chin. Phys.; (United States) Vol. 2:4; ISSN CHPHD
- Country of Publication:
- United States
- Language:
- English
Similar Records
Temperature characteristics of threshold current in InGaAsP/InP double-heterostructure lasers
New heterojunction InGaAsP/InP laser with high-temperature stability (T/sub 0/ = 180 K)
Related Subjects
420300* -- Engineering-- Lasers-- (-1989)
ALLOYS
ARSENIC COMPOUNDS
ARSENIDES
BARYONS
CARRIER DENSITY
ELEMENTARY PARTICLES
EPITAXY
FABRICATION
FERMIONS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HADRONS
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
JUNCTIONS
LASERS
NUCLEONS
PERFORMANCE
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
PROTONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
ZINC ADDITIONS
ZINC ALLOYS