New heterojunction InGaAsP/InP laser with high-temperature stability (T/sub 0/ = 180 K)

Journal Article · Wed Sep 01 04:00:00 EDT 1982 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.93550· OSTI ID:5062084

Yano, M; Morimoto, M; Nishitani, Y; Takusagawa, M

This letter proposes and demonstrates the operation of a new heterojunction InGaAsP/InP laser, a double-carrier-confinement heterojunction (DCC-heterojunction) laser. This laser is fabricated by incorporating a p-InGaAsP second well layer into a p-InP clad layer of the conventional InGaAsP/InP double-heterojunction laser. With this laser, excellent temperature stability of threshold current (T/sub 0/ is 180 K in the temperature range of 20--100 /sup 0/C when threshold current varies with exp(T/T/sub 0/)) and high external differential quantum efficiency (more than 45% at 100 /sup 0/C) were achieved. Beam divergence perpendicular to the junction plane was also much improved (less than 25/sup 0/).

• Research Organization: Fujitsu Laboratories, Ltd., 1015 Kamikodanaka Nakaharaku, Kawasaki 211, Japan
• OSTI ID: 5062084
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 41:5; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
BEAM PROFILES
CHARGE CARRIERS
CONFINEMENT
CURRENTS
DATA
DESIGN
EFFICIENCY
ELECTRIC CURRENTS
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFORMATION
JUNCTIONS
LASERS
LAYERS
MEDIUM TEMPERATURE
NUMERICAL DATA
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
QUANTUM EFFICIENCY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
STABILITY
THRESHOLD CURRENT