Analysis of threshold temperature characteristics for InGaAsP/InP double heterojunction lasers

Journal Article · Fri May 01 04:00:00 EDT 1981 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.329182· OSTI ID:6453681

Yano, M; Imai, H; Takusagawa, M

This paper presents a theoretical study of threshold temperature characteristics of InGaAsP/InP double heterojunction lasers, from the standpoint of carrier leakage from the quaternary active region into the InP confining layers. The leakage carrier concentration flowing beyond the heterobarrier of the InP confining layer is evaluated through an analysis of heterojunction energy-band structure. Analytical results indicate that, for an emission wavelength of 1.3 ..mu..m, the sharp increase in threshold current near room temperature is caused by carrier leakage. The contribution of carrier leakage is also discussed in relation to various wavelength InGaAsP lasers.

• Research Organization: Fujitsu Laboratories, Ltd., 1015 Kamikodanaka Nakahara-ku, Kawasaki, 211 Japan
• OSTI ID: 6453681
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 52:5; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
CARRIER DENSITY
CHARGE CARRIERS
DATA
ENERGY LEVELS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFORMATION
LASERS
LAYERS
MATHEMATICAL MODELS
MEDIUM TEMPERATURE
NUMERICAL DATA
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
POTENTIALS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
TEMPERATURE DEPENDENCE
THEORETICAL DATA
WAVELENGTHS