A vertical monolithic combination of an InGaAsP/InP laser and a heterojunction bipolar transistor
Journal Article
·
· IEEE J. Quant. Electron.; (United States)
A DH InGaAsP/InP mesa laser and a DH InGaAsP/InP mass-transport laser were successfully put together with an InGaAsP/InP heterojunction bipolar transistor in a vertical configuration. A laser threshold current as low as 17 mA and an output laser power of over 30 mW were achieved. Base injection current-controlled optical bistability and optical switching were demonstrated.
- Research Organization:
- Chengdu Institute of Radio Engineering
- OSTI ID:
- 6319062
- Journal Information:
- IEEE J. Quant. Electron.; (United States), Journal Name: IEEE J. Quant. Electron.; (United States) Vol. QE-23:6; ISSN IEJQA
- Country of Publication:
- United States
- Language:
- English
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Vertical integration of an InGaAsP/InP heterojunction bipolar transistor and a double heterostructure laser
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Facet degradation of InGaAsP/InP double-heterostructure lasers
Journal Article
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Mon Apr 06 00:00:00 EDT 1987
· Appl. Phys. Lett.; (United States)
·
OSTI ID:6728180
Monolithic optoelectronic switch based on the integration of a GaAs/AlGaAs heterojunction bipolar transistor and a GaAs vertical-cavity surface-emitting laser
Journal Article
·
Wed Sep 01 00:00:00 EDT 1993
· IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (United States)
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Journal Article
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Sun Dec 14 23:00:00 EST 1980
· Appl. Phys. Lett.; (United States)
·
OSTI ID:6650057
Related Subjects
42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
CONFIGURATION
CURRENTS
DESIGN
ELECTRIC CURRENTS
ELECTROMAGNETIC RADIATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
JUNCTIONS
LASER RADIATION
LASERS
MASS TRANSFER
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
POWER GENERATION
Q-SWITCHING
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
STABILITY
THRESHOLD CURRENT
TRANSISTORS
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
CONFIGURATION
CURRENTS
DESIGN
ELECTRIC CURRENTS
ELECTROMAGNETIC RADIATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
JUNCTIONS
LASER RADIATION
LASERS
MASS TRANSFER
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
POWER GENERATION
Q-SWITCHING
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
STABILITY
THRESHOLD CURRENT
TRANSISTORS