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Monolithic optoelectronic switch based on the integration of a GaAs/AlGaAs heterojunction bipolar transistor and a GaAs vertical-cavity surface-emitting laser

Journal Article · · IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (United States)
DOI:https://doi.org/10.1109/68.257183· OSTI ID:5647410
;  [1]; ; ; ;  [2]; ;  [3]
  1. Univ. of New Mexico, Albuquerque, NM (United States). Center for High Technology Materials
  2. Sandia National Lab., Albuquerque, NM (United States)
  3. AT and T Bell Labs., Breinigsville, PA (United States)

The authors describe the design and the first experimental demonstration of a monolithic integrated optoelectronic switch combining a GaAs/AlGaAs heterojunction bipolar transistor (HBT) with a vertical-cavity surface-emitting laser (VCSEL). The switch has high current gain (500--700), low power dissipation (27 and 55 mW dc at optical output levels of 0.4 and 1.2 mW, respectively, and a high optical output levels of 0.4 and 1.2 mW, respectively), and a high optical-to-electrical conversion efficiency (150 W/A) under dc bias conditions, thus providing a high-performance electrical-to-optical interface for high-speed optical interconnections.

DOE Contract Number:
AC04-76DP00789
OSTI ID:
5647410
Journal Information:
IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (United States) Vol. 5:9; ISSN 1041-1135; ISSN IPTLEL
Country of Publication:
United States
Language:
English