Monolithic optoelectronic switch based on the integration of a GaAs/AlGaAs heterojunction bipolar transistor and a GaAs vertical-cavity surface-emitting laser
Journal Article
·
· IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (United States)
- Univ. of New Mexico, Albuquerque, NM (United States). Center for High Technology Materials
- Sandia National Lab., Albuquerque, NM (United States)
- AT and T Bell Labs., Breinigsville, PA (United States)
The authors describe the design and the first experimental demonstration of a monolithic integrated optoelectronic switch combining a GaAs/AlGaAs heterojunction bipolar transistor (HBT) with a vertical-cavity surface-emitting laser (VCSEL). The switch has high current gain (500--700), low power dissipation (27 and 55 mW dc at optical output levels of 0.4 and 1.2 mW, respectively, and a high optical output levels of 0.4 and 1.2 mW, respectively), and a high optical-to-electrical conversion efficiency (150 W/A) under dc bias conditions, thus providing a high-performance electrical-to-optical interface for high-speed optical interconnections.
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 5647410
- Journal Information:
- IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (United States) Vol. 5:9; ISSN 1041-1135; ISSN IPTLEL
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
42 ENGINEERING
426000* -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
AMPLIFICATION
DATA
DESIGN
EFFICIENCY
ELECTRICAL EQUIPMENT
ENERGY LOSSES
EQUIPMENT
EXPERIMENTAL DATA
GAIN
HETEROJUNCTIONS
INFORMATION
JUNCTION TRANSISTORS
JUNCTIONS
LASERS
LOSSES
NUMERICAL DATA
PERFORMANCE
POWER LOSSES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SOLID STATE LASERS
SWITCHES
TRANSISTORS
USES
426000* -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
AMPLIFICATION
DATA
DESIGN
EFFICIENCY
ELECTRICAL EQUIPMENT
ENERGY LOSSES
EQUIPMENT
EXPERIMENTAL DATA
GAIN
HETEROJUNCTIONS
INFORMATION
JUNCTION TRANSISTORS
JUNCTIONS
LASERS
LOSSES
NUMERICAL DATA
PERFORMANCE
POWER LOSSES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SOLID STATE LASERS
SWITCHES
TRANSISTORS
USES