DC modeling and characterization of AlGaAs/GaAs heterojunction bipolar transistors for high-temperature applications
- Washington State Univ., Pullman, WA (United States). School of Electrical Engineering and Computer Science
There is currently a demand for active electronic devices operating reliably over wide range of temperatures. Potential applications for the high-temperature devices and integrated circuits are in the areas of jet engine and control instrumentation for nuclear power plants. Here, the large signal dc characteristics of AlGaAs/GaAs heterojunction bipolar transistors (HBT) at high temperatures (27--300 C) are reported. A high-temperature SPICE model is developed which includes the recombination-generation current components and avalanche multiplication which become extremely important at high temperatures. The effect of avalanche breakdown is also included to model the current due to thermal generation of electron/hole pairs causing breakdown at high temperatures. A parameter extraction program is developed used to extract the model parameters of HBT's at different temperatures. Fitting functions for the model parameters as a function of temperature are developed. These parameters are then used in the SPICE Ebers-Moll model for the dc characterization of the HBT at any temperature between (27--300 C).
- OSTI ID:
- 7300973
- Journal Information:
- IEEE Journal of Solid-State Circuits (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Journal of Solid-State Circuits (Institute of Electrical and Electronics Engineers); (United States) Vol. 29:2; ISSN IJSCBC; ISSN 0018-9200
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
426000* -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
440000 -- Instrumentation
47 OTHER INSTRUMENTATION
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
COMPUTER CODES
ELECTRICAL PROPERTIES
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
JUNCTION TRANSISTORS
MATHEMATICAL MODELS
MEASURING INSTRUMENTS
PHYSICAL PROPERTIES
PNICTIDES
S CODES
SEMICONDUCTOR DEVICES
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE
TEMPERATURE RANGE 0273-0400 K
TEMPERATURE RANGE 0400-1000 K
TRANSISTORS
USES