Facet degradation of InGaAsP/InP double-heterostructure lasers

Journal Article · Sun Dec 14 23:00:00 EST 1980 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.91871· OSTI ID:6650057

Morimoto, M; Imai, H; Hori, K; Takusagawa, M; Fukuda, M

The facet degradation of InGaAsP/InP double-heterostructure (DH) lasers was studied in water. It was found that the facet degradation of InGaAsP/InP DH lasers is caused by facet oxidation and that the oxidation rate is some orders of magnitude lower than that of GaAlAs DH lasers. Facet degradation is accelerated by the water temperature, while no optical power dependence was exhibited below 6.7 mW/..mu..m/sup 2/ in this study.

• Research Organization: Fujitsu Laboratories Ltd., 1015 Kamikodanaka, Nakahara-ku, Kawasaki 211, Japan
• OSTI ID: 6650057
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 37:12; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL REACTIONS
COMPARATIVE EVALUATIONS
DECOMPOSITION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HYDROGEN COMPOUNDS
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
LASERS
OXIDATION
OXYGEN COMPOUNDS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SURFACES
TEMPERATURE DEPENDENCE
WATER