InP/InGaAsP lasers with broad area double heterostructure lasers as back-face monitors

Journal Article · Sat Oct 01 00:00:00 EDT 1988 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.341415· OSTI ID:6842023

Segner, B P; Koszi, L A; Temkin, H; Flynn, E J; Ketelsen, L J.P.; Napholtz, S G; Przybylek, G J

An InP/InGaAsP laser-monitor hybrid structure which demonstrates the use of channeled-substrate buried-heterostructure lasers or broad area double heterostructure devices as ''on-board'' edge-detecting back-face monitors is presented. Devices with and without antireflection facet coatings are used as monitors. A linear relationship between photocurrent and light output from the laser is observed for all monitor types. A photocurrent of 17.6 ..mu..A/mW is obtained with a facet-coated, broad area monitor (at a monitor-laser separation of approx. =100 ..mu..m). The sensitivities obtained are in close agreement with those predicted assuming close to unity quantum efficiency in the junction region. Improved chip placement precision could permit a possible doubling of the monitor sensitivity.

• Research Organization: ATandT Bell Laboratories, Murray Hill, New Jersey 07974
• OSTI ID: 6842023
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 64:7; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
COATINGS
CURRENTS
ELECTRIC CURRENTS
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
JUNCTIONS
LASERS
MEASURING INSTRUMENTS
MONITORS
OPERATION
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOTOCURRENTS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SENSITIVITY