Facet degradation and passivation of InGaAsP/InP lasers

Journal Article · Thu Jul 01 00:00:00 EDT 1982 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.93322· OSTI ID:5339976

Fukuda, M; Takahei, K; Iwane, G; Ikegami, T

Formation of oxide on mirror facets was observed by Auger electron spectroscopy in InGaAsP/ InP buried heterostructure lasers. The oxide on the mirror facets caused increase of threshold current and leakage current, and decrease of differential quantum efficiency. Such phenomena were observed under nonlasing high current density operation as well as under high optical output power operation. The degradation of lasers due to the mirror facet oxidation is shown to be suppressed by coating the mirror facet with Al/sub 2/O/sub 3/.

• Research Organization: Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation, Musashino-shi, Tokyo 180, Japan
• OSTI ID: 5339976
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 41:1; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM COMPOUNDS
ALUMINIUM OXIDES
ARSENIC COMPOUNDS
ARSENIDES
AUGER ELECTRON SPECTROSCOPY
CHALCOGENIDES
CURRENT DENSITY
CURRENTS
DATA
DEPOSITION
EFFICIENCY
ELECTRIC CURRENTS
ELECTRON SPECTROSCOPY
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFORMATION
JUNCTIONS
LASERS
LEAKAGE CURRENT
MIRRORS
NUMERICAL DATA
OXIDES
OXYGEN COMPOUNDS
PASSIVATION
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
QUANTUM EFFICIENCY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SPECTROSCOPY
SURFACE COATING
SURFACES
THERMAL DEGRADATION
THRESHOLD CURRENT