Facet oxidation of InGaAsP/InP and InGaAs/InP lasers

Journal Article · Tue Nov 01 04:00:00 EST 1983 · IEEE J. Quant. Electron.; (United States)

DOI:https://doi.org/10.1109/JQE.1983.1071767· OSTI ID:7048512

Fukuda, M

The facet oxidation of InGaAsP/InP and InGaAs/InP lasers is investigated after aging under high constant optical output power or high current stress. Facet oxidation in InGaAsP/InP lasers is negligibly small under several thousand hours of practical operation. The thickness of oxide film increases in proportion to optical output power and logarithm of aging time. The growth rate of facet oxide film weakly depends on the junction temperature and the activation energy is estimated to be 0.07 eV within a experimental range between 25 and 150/sup 0/C. The facet of InGaAs/InP lasers are oxidized more easily than that of InGaAsP/InP lasers but are about two orders of magnitude more stable against oxidation than that of A1GaAs/GaAs lasers.

• Research Organization: Atsugi Electrical Communication Lab., Nippon Telegraph and Telephone Public Corp., Kanagawa
• OSTI ID: 7048512
• Journal Information: IEEE J. Quant. Electron.; (United States), Journal Name: IEEE J. Quant. Electron.; (United States) Vol. 19:11; ISSN IEJQA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ACTIVATION ENERGY
AGING
ARSENIC COMPOUNDS
ARSENIDES
CHALCOGENIDES
CHEMICAL REACTIONS
DIMENSIONS
ENERGY
ENERGY RANGE
EV RANGE
FILMS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
LASERS
OXIDATION
OXIDES
OXYGEN COMPOUNDS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
STRESSES
TEMPERATURE DEPENDENCE
THICKNESS