Facet oxidation of InGaAsP/InP and InGaAs/InP lasers

Journal Article · Tue Nov 01 04:00:00 EST 1983 · IEEE J. Quant. Electron.; (United States)

DOI:https://doi.org/10.1109/JQE.1983.1071767· OSTI ID:6559631

Fukuda, M

The facet oxidation of InGaAsP/InP and InGaAs/InP lasers is investigated after aging under high constant optical output power or high current stress. Facet oxidation in InGaAsP/InP lasers is negligibly small under several thousand hours of practical operation. The thickness of oxide fim increases in proportion to optical output power and logarithm of aging time. The growth rate of facet oxide film weakly depends on the junction temperature and the activation energy is estimated to bP 0.07 eV within an experimental range between 25 and 150 C. The facets of InGaAs/InP lasers are oxidized more easily than that of InGaAsP/InP lasers but are about two orders of magnitude more stable against oxidation than that of AlGaAs/GaAs lasers. 49 references.

• Research Organization: Nippon Telegraph and Telephone Public Corp., Atsugi, Kanagawa, Japan
• OSTI ID: 6559631
• Journal Information: IEEE J. Quant. Electron.; (United States), Journal Name: IEEE J. Quant. Electron.; (United States) Vol. QE-19; ISSN IEJQA
• Country of Publication: United States
• Language: English

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42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
APERTURES
ARSENIC COMPOUNDS
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INDIUM COMPOUNDS
INDIUM PHOSPHIDES
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OXIDATION
PERFORMANCE
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