Buried heterostructure lasers by silicon implanted, impurity induced disordering

Journal Article · Sun Nov 01 23:00:00 EST 1987 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.98689· OSTI ID:5982998

Welch, D F; Scifres, D R; Cross, P S; Streifer, W

Buried heterostructure lasers have been fabricated using impurity induced disordering from an implanted Si diffusion source. The diffused Si extends over 1 ..mu..m deep through the active region where the quantum wells are partially homogenized with the barrier and cladding layers to produce a lower refractive index and higher band-gap material. The resulting real refractive index waveguide exhibits single longitudinal and transverse mode behavior to greater than 20 mW for a 4-..mu..m-wide waveguide.

• Research Organization: Spectra Diode Laboratories, 3333 North First Street, San Jose, California 95134
• OSTI ID: 5982998
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 51:18; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
ATOM TRANSPORT
DIFFUSION
ELEMENTS
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
IMPURITIES
ION IMPLANTATION
JUNCTIONS
LASERS
NEUTRAL-PARTICLE TRANSPORT
OPERATION
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
PNICTIDES
RADIATION TRANSPORT
REFRACTIVITY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SEMIMETALS
SILICON
WAVEGUIDES