Impurity induced disordered quantum well heterostructure stripe geometry lasers by MeV oxygen implantation

Journal Article · Mon Jul 10 04:00:00 EDT 1989 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.102098· OSTI ID:5915904

Bryan, R P; Coleman, J J; Miller, L M; Givens, M E; Averback, R S; Klatt, J L

Data are presented on stripe geometry AlGaAs-GaAs graded barrier quantum well heterostructure lasers formed by MeV oxygen implantation and annealing. Low-dose implants are found to suppress lateral carrier diffusion but do not result in compositional disordering. High-dose implants form both a semi-insulating and a compositionally disordered region leading to index-guided buried-heterostructure laser operation. However, the concentration of oxygen which spreads laterally under the implantation mask during high-dose implants is sufficient to partially compensate the stripe region for narrow stripe widths and thereby significantly increases the threshold current.

• Research Organization: Materials Research Laboratory, University of Illinois, 1406 West Green Street, Urbana, Illinois 61801(US)
• DOE Contract Number: AC02-76ER01198
• OSTI ID: 5915904
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 55:2; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHARGE CARRIERS
CHARGED PARTICLES
CHARGED-PARTICLE TRANSPORT
CURRENTS
DATA
ELECTRIC CURRENTS
ENERGY RANGE
EXPERIMENTAL DATA
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INFORMATION
ION IMPLANTATION
IONS
LASERS
MEV RANGE
MEV RANGE 01-10
NUMERICAL DATA
OXYGEN IONS
PNICTIDES
RADIATION TRANSPORT
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
THRESHOLD CURRENT