High efficiency single quantum well graded-index separate-confinement heterostructure lasers fabricated with MeV oxygen ion implantation

Journal Article · Mon Feb 20 04:00:00 EST 1989 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.100875· OSTI ID:6587905

Xiong, F; Tombrello, T A; Wang, H; Chen, T R; Chen, H Z; Morkoc, H; Yariv, A

Single quantum well AlGaAs/GaAs graded-index separate-confinement heterostructure lasers have been fabricated using MeV oxygen ion implantation plus optimized subsequent thermal annealing. A high differential quantum efficiency of 85% has been obtained in a 360-..mu..m-long and 10-..mu..m-wide stripe geometry device. The results have also demonstrated that excellent electrical isolation (breakdown voltage of over 30 V) and low threshold currents (22 mA) can be obtained with MeV oxygen ion isolation. It is suggested that oxygen ion implantation induced selective carrier compensation and compositional disordering in the quantum well region as well as radiation-induced lattice disordering in Al/sub x/Ga/sub 1-//sub x/As/GaAs may be mostly responsible for the buried layer modification in this fabrication process.

• Research Organization: California Institute of Technology, Pasadena, California 91125
• OSTI ID: 6587905
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 54:8; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
BREAKDOWN
CHARGED PARTICLES
CURRENTS
DATA
EFFICIENCY
ELECTRIC CURRENTS
ENERGY RANGE
EXPERIMENTAL DATA
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HEAT TREATMENTS
HETEROJUNCTIONS
INFORMATION
ION IMPLANTATION
IONS
JUNCTIONS
LASERS
MEV RANGE
NUMERICAL DATA
OPERATION
OXYGEN IONS
PERFORMANCE
PNICTIDES
QUANTUM EFFICIENCY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
THRESHOLD CURRENT