Low threshold current implanted-planar buried-heterostructure graded-index separate confinement heterostructure laser in GaAs/AlGaAs

Journal Article · Mon May 14 00:00:00 EDT 1990 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.103030· OSTI ID:6813352

Vawter, G A; Myers, D R; Brennan, T M; Hammons, B E ^[1]

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1. Sandia National Laboratories, Albuquerque, New Mexico 87185 (USA)

We report dramatic improvements to the implanted-planar buried-heterostructure graded-index separate confinement heterostructure (IPBH-GRINSCH) laser in (AlGa)As/GaAs which produces low threshold current, continuous-wave operation. Our process features significantly reduced fabrication complexity of high quality, index-guided laser diodes compared to regrowth techniques and, in contrast to diffusion-induced disordering, allows creation of self-aligned, buried, blocking junctions by ion implantation. The improved single-stripe IPBH-GRINSCH lasers exhibit 39 mA threshold current, cw operation.

• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6813352
• Journal Information: Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 56:20; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426002* -- Engineering-- Lasers & Masers-- (1990-)
CURRENTS
DESIGN
EFFICIENCY
ELECTRIC CURRENTS
FABRICATION
ION IMPLANTATION
LASERS
NATIONAL ORGANIZATIONS
OPERATION
QUANTUM EFFICIENCY
SANDIA LABORATORIES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SOLID STATE LASERS
THRESHOLD CURRENT
US AEC
US DOE
US ERDA
US ORGANIZATIONS