All-implanted planar-buried-heterostructure graded-index separate-confinement-heterostructure laser in GaAs/AlGaAs
Conference
·
OSTI ID:6331563
We report operation of an all-implanted planar-buried heterostructure graded-index separate-confinement-heterostructure laser in GaAs/AlGaAs. The structure utilizes only Si and Be ion-implantation and rapid thermal annealing to form both the reverse blocking junctions and the buried-heterostructure waveguide. 1 ref., 2 figs.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (USA)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 6331563
- Report Number(s):
- SAND-88-3099C; CONF-890423-1; ON: DE89002892
- Country of Publication:
- United States
- Language:
- English
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