Implanted-planar-buried-heterostructure, graded-index, separate-confinement-heterostructure laser in GaAs/AlGaAs

Journal Article · Sat Jul 01 04:00:00 EDT 1989 · IEEE Photonics Technology Letters; (USA)

DOI:https://doi.org/10.1109/68.36022· OSTI ID:5418585

Vawter, G A; Myers, D R; Brennan, T M; Hammons, B E; Hohimer, J P ^[1]

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1. Sandia National Labs., Albuquerque, NM (USA)

The authors report the first implanted-planar-buried-heterostructure, graded-index, separate-confinement-heterostructure (IPBH-GRINSCH) laser in (AlGa)As/GaAs. Ion implantation is used to form p-n-p-n current blocking layers and to create a buried-heterostructure waveguide. This results in significantly reduced fabrication complexity of high-quality, index-guided laser diodes compared to regrowth techniques, and in contrast to diffusion-induced disordering, allows for the creation of self-aligned, buried, blocking junctions. The authors demonstrate kink-free, CW operation of single-stripe IPBH-GRINSCH lasers along with single-lobed near- and far-field optical emission patterns, consistent with index-guided operation.

• OSTI ID: 5418585
• Journal Information: IEEE Photonics Technology Letters; (USA), Journal Name: IEEE Photonics Technology Letters; (USA) Vol. 1:7; ISSN IPTLE; ISSN 1041-1135
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CURRENT DENSITY
EMISSION
ENERGY-LEVEL TRANSITIONS
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
ION IMPLANTATION
JUNCTIONS
LASERS
OPERATION
OPTICAL PROPERTIES
P-N JUNCTIONS
PHYSICAL PROPERTIES
PNICTIDES
QUALITY ASSURANCE
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SOLID STATE LASERS
STIMULATED EMISSION
WAVEGUIDES