Index-guided operation in narrow stripe InGaAs-GaAs strained-layer quantum well heterostructure lasers by MeV oxygen implantation

Journal Article · Mon May 13 04:00:00 EDT 1991 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.105009· OSTI ID:5647240

Alwan, J J; Honig, J; Favaro, M E; Beernink, K J; Klatt, J L; Averback, R S; Coleman, J J ^[1]; Bryan, R P ^[2]

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1. Univ. of Illinois, Urbana, IL (United States)
2. Sandia National Labs., Albuquerque, NM (United States)

Stable index-guided operation of variable stripe strained-layer InGaAs-GaAs-AlGaAs lasers achieved by MeV oxygen implantation-induced disorder of the active region is demonstrated. Well-behaved near- and far-field patterns for lasers implanted with 5 [times] 10[sup 16] cm[sup [minus]2] and 1 [times] 10[sup 17] cm[sup [minus]2] oxygen are observed to be stable with increasing drive current. Comparison with unimplanted, oxide-defined stripe lasers fabricated from the same wafer indicates a dramatic improvement in emission characteristics as a result of the presence of a lateral real-index waveguide in the oxygen-disordered regions which is stronger than the carrier-induced antiguide present in unimplanted InGaAs-GaAs strained-layer lasers.

• DOE Contract Number: AC02-76ER01198; AC04-76DP00789
• OSTI ID: 5647240
• Journal Information: Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 58:19; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426002* -- Engineering-- Lasers & Masers-- (1990-)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
ELEMENTS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
ION IMPLANTATION
JUNCTIONS
LASERS
NONMETALS
OXYGEN
PERFORMANCE
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
SEMICONDUCTOR JUNCTIONS
SOLID STATE LASERS