Anomalous dependence of threshold current on stripe width in gain-guided strained-layer InGaAs/GaAs quantum well lasers

Journal Article · Mon Jun 19 04:00:00 EDT 1989 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.101081· OSTI ID:6184041

Shieh, C; Mantz, J; Lee, H; Ackley, D; Engelmann, R

An anomalous dependence of the threshold current on the stripe width isobserved for gain-guided strained-layer InGaAs/GaAs quantum well lasers. Thethreshold current increases strongly as the stripe width is reduced fromrelatively large values. This is attributed to the huge lateral loss caused byan unusually large index antiguide which manifests itself in the far-fieldbehavior. This large loss also leads to a population of higher quantized energylevels in the InGaAs quantum well strongly reducing the lasing wavelength by asmuch as 61 nm.

• Research Organization: Siemens Corporate Research Inc., 755 College Road East, Princeton, New Jersey 08540(US)
• OSTI ID: 6184041
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 54:25; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
AMPLIFICATION
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
DESIGN
ELECTRIC CURRENTS
EPITAXY
FABRICATION
GAIN
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
LASERS
LAYERS
MOLECULAR BEAM EPITAXY
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
PNICTIDES
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR LASERS
STRAINS
THRESHOLD CURRENT