Investigation of InGaAs/GaAs Quantum Well Lasers with Slightly Doped Tunnel Junction

Journal Article · Sat Dec 15 04:00:00 EST 2018 · Semiconductors

DOI:https://doi.org/10.1134/S1063782618160169· OSTI ID:22945123

Li, Yajie; Wang, Pengfei; Meng, Fangyuan; Yu, Hongyan; Zhou, Xuliang; Wang, Huolei; Pan, Jiaoqing ^[1]

---

1. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Science (China)

We experimentally investigate and analyze the electrical and optical characteristics of InGaAs/GaAs conventional quantum well laser diode and the quantum well laser diode with slightly-doped tunnel junction. It was found that the laser with slightly-doped tunnel junction has a nonlinear S-shape current-voltage characteristic. The internal quantum efficiencies of the laser with slightly-doped tunnel junction and the conventional laser are 21 and 87.3%, respectively. This suggests that the slightly-doped tunnel junction increased the barrier width and free carrier absorption, thus could reduce the electron tunneling probability and increase the internal loss. Furthermore, compared with the conventional laser, it was found that we could achieve 15 nm broadband spectrum from the laser with slightly-doped tunnel junction, due to the lasing dynamics reflecting the current dynamics. The results show that the slightly-doped tunnel junction plays a crucial role in the laser diode performances, which may lead to the realization of more applications.

• OSTI ID: 22945123
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 16 Vol. 52; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ABSORPTION
CARRIERS
DOPED MATERIALS
ELECTRIC CURRENTS
ELECTRIC POTENTIAL
ELECTRONS
GALLIUM ARSENIDES
INDIUM ARSENIDES
NONLINEAR PROBLEMS
PROBABILITY
QUANTUM EFFICIENCY
QUANTUM WELLS
SEMICONDUCTOR LASERS
SPECTRA
TUNNEL EFFECT
TUNNEL JUNCTIONS