Quantum-well transverse-junction stripe laser

Thesis/Dissertation · Fri Jan 01 04:00:00 EST 1988

OSTI ID:5607961

Yang, Y J

The research and development of four new quantum-well transverse junction stripe lasers (TJS) are presented, which are (1) GaAs-AlGaAs multiple quantum well (MQW) TJS laser; (2) GaAs-AlGaAs single quantum well (SQW) TJS laser; (3) InGaAs-GaAs-AlGaAs strained layer MQW-TJS laser; and (4) InGaAs-GaAs-AlGaAs strained-layer SQW-TJS laser. The research work involves (1) crystal growth and material characterization, (2) laser diode fabrication and device testing. The first (CW, 300K) MQW-TJS laser with a lateral heterobarrier produced by selective zinc diffusion disordering was demonstrated. The low threshold current of 25mA and single-mode operation demonstrated that high quality p{sup +}-p-n junction and disordered heterobarrier can be fabricated by zinc diffusion disordering. The first (CW, 300K) strained-layer InGaAs-GaAs-AlGaAs MQW-TJS laser has also been developed. The laser diode operates single mode at 21mA, with excellent performance. Both SQW-TJS and strained-layer SQW-TJS lasers were demonstrated. The threshold currents of these lasers are 105mA and 55 mA respectively, which are higher than those of MQW-TJS and strained-layer MQW-TJS laser.

• Research Organization: North Carolina State Univ., Raleigh, NC (USA)
• OSTI ID: 5607961
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL GROWTH
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
LASERS
MATERIALS TESTING
PERFORMANCE
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR LASERS
SOLID STATE LASERS
TESTING