Continuous room-temperature operation of an InGaAs-GaAs-AlGaAs strained-layer laser

Journal Article · Mon Jul 27 00:00:00 EDT 1987 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.98479· OSTI ID:6418027

Yang, Y J; Hsieh, K Y; Kolbas, R M

We report the first continuous wave room-temperature InGaAs-GaAs-AlGaAs strained-layer semiconductor laser diode grown by molecular beam epitaxy. The laser is a multiple quantum well transverse junction stripe laser with a lateral heterojunction fabricated by zinc diffusion enhanced compositional disordering. The low-threshold (20 mA) and single-mode performance of the laser demonstrates that a high-quality lateral p/sup +/-p-n junction and lateral heterobarrier can be formed by zinc diffusion compositional disordering of a strained-layer InGaAs-GaAs-AlGaAs quantum well heterostructure.

• Research Organization: Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695-7911
• OSTI ID: 6418027
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 51:4; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
ATOM TRANSPORT
DATA
DIFFUSION
ELEMENTS
EPITAXY
EXPERIMENTAL DATA
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
INFORMATION
JUNCTIONS
LASERS
LAYERS
METALS
MOLECULAR BEAM EPITAXY
NEUTRAL-PARTICLE TRANSPORT
NUMERICAL DATA
OPERATION
PERFORMANCE
PNICTIDES
RADIATION TRANSPORT
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
ZINC